• DocumentCode
    1272023
  • Title

    InAs-based heterojunction bipolar transistors

  • Author

    Maimon, S. ; Averett, K.L. ; Wu, X. ; Koch, M.W. ; Wicks, G.W.

  • Author_Institution
    Inst. of Opt., Rochester Univ., NY, USA
  • Volume
    38
  • Issue
    7
  • fYear
    2002
  • fDate
    3/28/2002 12:00:00 AM
  • Firstpage
    344
  • Lastpage
    346
  • Abstract
    The first InAlAs-InAs heterojunction bipolar transistors are reported. A current gain of 100 at room temperature is measured. The base-collector junction is an InAs p-n homojunction, which is optimised to have low reverse leakage at room temperature. The emitter is pseudomorphic AlInAs, linearly graded to increase the barrier which inhibits hole injection into the emitter
  • Keywords
    III-V semiconductors; aluminium compounds; heterojunction bipolar transistors; indium compounds; leakage currents; InAlAs-InAs; InAlAs/InAs heterojunction bipolar transistors; InAs p-n homojunction; InAs-based HBT; base-collector junction; pseudomorphic AlInAs emitter; reverse leakage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020214
  • Filename
    995502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1272023