Title :
High performance p+-gate pMOSFETs with N2O-nitrided SiO2 gate films
Author :
Uchiyama, Asami ; Fukuda, Hiroshi ; Hayashi, Teruaki ; Iwabuchi, T. ; Ohno, S.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Sub-micrometre p+-gate surface-channel pMOSFETs have been successfully fabricated with 6-10 nm-thick nitrided SiO2 gate films formed in an N2O ambient. The devices have excellent reliability in hot-carrier-induced degradation because of the good abilities of N2O-nitrided SiO2 films in both the blocking of boron penetration and the reduction in electron traps.
Keywords :
dielectric thin films; electron traps; hot carriers; insulated gate field effect transistors; nitridation; reliability; silicon compounds; 6 to 10 nm; B penetration blocking; N 2O ambient; Si:B-SiO 2; SiO xN y; electron traps; gate films; hot-carrier-induced degradation; p type MOSFETs; reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901250
