DocumentCode
1272394
Title
Lateral Si avalanche photodiode fabricated over an etched interdigital mesa
Author
Choi, Y.-I. ; Chung, Shih-Kai
Volume
26
Issue
23
fYear
1990
Firstpage
1946
Lastpage
1947
Abstract
A lateral Si avalanche photodiode suitable for monolithic integrated circuits is fabricated over an etched interdigital mesa. The lateral structure ensures pure electron injection exhibiting no wavelength dependence of the multiplication and the multiplication noise. Substantial enhancement in the quantum efficiency at short wavelengths was observed.
Keywords
avalanche photodiodes; elemental semiconductors; etching; integrated optoelectronics; silicon; etched interdigital mesa; lateral Si avalanche photodiode; monolithic integrated circuits; multiplication noise; pure electron injection; quantum efficiency; short wavelengths;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901259
Filename
59538
Link To Document