Title :
Methods for generating and editing merged isotropic/anisotropic triangular-element meshes
Author :
Netzel, Mario ; Heinemann, Bernd ; Brett, Maik ; Schipanski, Dagmar
Author_Institution :
Fac. of Electr. Eng. & Inf. Tech., Tech. Hochschule Ilmenau, Germany
fDate :
11/1/1999 12:00:00 AM
Abstract :
This paper describes automated methods for generating and editing triangular meshes based on a heuristic approach. These algorithms yield a triangulation that allows the solution of the two dimensional semiconductor device equations very efficiently. Compared to commonly used concepts, our method delivers a smaller number of nodes combined with an excellent representation of the device geometry and an acceptable numeric quality of triangular elements. For this purpose, a priori known anisotropic solution behavior of the device equations at doping fronts, p-n junctions, and material interfaces is consequently exploited in generating the initial grid. Furthermore, appropriate tools for the refinement of the merged grids are presented
Keywords :
digital simulation; electronic engineering computing; finite element analysis; integrated circuit modelling; mesh generation; semiconductor device models; 2D semiconductor device equations; FEM; device geometry; doping fronts; grid refinement; heuristic approach; material interfaces; merged isotropic/anisotropic meshes; mesh editing; mesh generation; p-n junctions; triangular-element meshes; Anisotropic magnetoresistance; Context modeling; Equations; Geometry; Mesh generation; Numerical analysis; P-n junctions; Semiconductor device doping; Semiconductor devices; Semiconductor materials;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on