• DocumentCode
    1272705
  • Title

    Lateral drift and recombination of photogenerated carriers in multiple quantum well hetero nipi structures

  • Author

    Thirstrup, C. ; Wa, P.L.K. ; Button, C.C. ; Roberts, J.S. ; Robson, P.N.

  • Author_Institution
    Microelectron. Centre, Tech. Univ. of Denmark, Lyngby, Denmark
  • Volume
    26
  • Issue
    23
  • fYear
    1990
  • Firstpage
    1935
  • Lastpage
    1936
  • Abstract
    The lateral spreading of photocarriers in a multiple quantum well hetero nipi structure is reported. The physical behaviour of the carriers is explained by a simple model. The results indicate the importance of decreasing the lateral device dimensions in order to obtain a large absorption change and a corresponding large change in the refractive index at low power levels.
  • Keywords
    III-V semiconductors; aluminium compounds; electron-hole recombination; gallium arsenide; photoelectricity; semiconductor device models; semiconductor quantum wells; GaAs; GaAs-AlGaAs hetero nipi structure; electron-hole pairs; large absorption change; laser pump beam; lateral device dimensions; lateral drift; low power levels; multiple quantum well hetero nipi structures; photocarriers; photogenerated carriers; recombination; refractive index;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901252
  • Filename
    59540
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1272705