Actively stabilized single-frequency vertical-external-cavity AlGaAs laser

Author

Holm, M.A. ; Burns, D. ; Ferguson, A.I. ; Dawson, M.D.

Author_Institution

Inst. of Photonics, Strathclyde Univ., Glasgow, UK

Volume

11

Issue

12

fYear

1999

Firstpage

1551

Lastpage

1553

Abstract

We report on actively stabilized single-frequency operation of a vertical-external-cavity surface-emitting semiconductor laser (VECSEL). The VECSEL was locked to a 300-MHz reference cavity allowing a relative frequency measurement that indicated a laser linewidth of 3 kHz. Coarse tuning over an 8.5-nm range was achieved, with fine tuning over 250 MHz. The laser produced up to 42 mW of output power in single-frequency operation.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser frequency stability; laser tuning; optical pumping; quantum well lasers; surface emitting lasers; 300 MHz; 42 mW; Al/sub 0.5/Ga/sub 0.5/As-GaAs-Al/sub 0.2/Ga/sub 0.8/As-AlAs-GaAs; GaAs; VECSEL; actively stabilized single-frequency operation; actively stabilized single-frequency vertical-external-cavity AlGaAs laser; coarse tuning; fine tuning; laser diode pumping; laser linewidth; output power; reference cavity; relative frequency measurement; vertical-external-cavity surface-emitting semiconductor laser; Erbium-doped fiber lasers; Laser excitation; Laser modes; Laser stability; Laser tuning; Power generation; Pump lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.806843

Filename

806843