High-power mid-infrared light emitting diodes grown by MOVPE

Light emitting diodes (LEDs) are fabricated on the basis of MOVPE-grown N-InAsSbP/n-InAsSb/P-InAsSbP heterostructures. LEDs operating in the 3.45-4.45 μm wavelength range at room temperature are produced by employing InAsSb active layers with different Sb content. The photoluminescence of InAsSb layers and electroluminescence properties of LEDs are investigated. LED light-current characteristics in both quasi-continuous wave mode and pulsed mode are also studied. Increasing LED efficiency with improved carrier confinement is observed. When operating at 50% duty cycle, the LEDs (room temperature wavelength λ =4.27μm) produce an average power of 0.3 mW when driving an average current of 0.25 A. With a peak current of 1.4 A (5% duty cycle), the pulse power of the diodes (room temperature wavelength λ = 4.27 μm) is measured as 2.5 mW