High-power mid-infrared light emitting diodes grown by MOVPE

Author

Kizhayev, S.S. ; Zotova, N.V. ; Molchanov, S.S. ; Yakovlev, Y.P.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

Volume

149

Issue

1

fYear

2002

fDate

2/1/2002 12:00:00 AM

Firstpage

36

Lastpage

39

Abstract

Light emitting diodes (LEDs) are fabricated on the basis of MOVPE-grown N-InAsSbP/n-InAsSb/P-InAsSbP heterostructures. LEDs operating in the 3.45-4.45 μm wavelength range at room temperature are produced by employing InAsSb active layers with different Sb content. The photoluminescence of InAsSb layers and electroluminescence properties of LEDs are investigated. LED light-current characteristics in both quasi-continuous wave mode and pulsed mode are also studied. Increasing LED efficiency with improved carrier confinement is observed. When operating at 50% duty cycle, the LEDs (room temperature wavelength λ =4.27μm) produce an average power of 0.3 mW when driving an average current of 0.25 A. With a peak current of 1.4 A (5% duty cycle), the pulse power of the diodes (room temperature wavelength λ = 4.27 μm) is measured as 2.5 mW

Keywords

III-V semiconductors; MOCVD; electroluminescence; indium compounds; infrared sources; light emitting diodes; photoluminescence; semiconductor growth; vapour phase epitaxial growth; 0.25 A; 0.3 mW; 1.4 A; 2.5 mW; 3.45 to 4.45 micron; InAsSbP-InAsSb-InAsSbP; LED efficiency; MOVPE; electroluminescence; high-power mid-infrared LED; improved carrier confinement; light-current characteristics; photoluminescence; portable gas analysers; pulsed mode; quasi-continuous wave mode; room temperature;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20020171

Filename

995782