Title :
Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
Author :
Mikhailova, M.P. ; Stoyanov, N.D. ; Andreychuk, O.V. ; Moiseev, K.D. ; Andreev, I.A. ; Yakovlev, Y.P. ; Afrailov, M.A.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
2/1/2002 12:00:00 AM
Abstract :
The authors present results of research and development of mid-infrared photodiodes based on antimonide solid solutions operating at room temperature in the spectral range of 1.5-4.8 μm. A new physical approach to the design of long-wavelength photodiodes is proposed by using type II broken-gap heterostructures grown by liquid-phase epitaxy on GaSb substrates. The choice of sequence of the narrow-gap and wide-gap layers in the GaSb/InGaAsSb/GaInAsSb and GaSb/InGaAsSb/AlGaAsSb heterostructures allows one to vary the band energy diagram and barrier heights on the interface. Electrical and photoelectrical parameters of three kinds of devices were studied. A detectivity of D*λ=4.1×108 cmHz1/2/W was found at λ=4.7 μm, T=300 K
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; photodiodes; semiconductor device measurement; semiconductor growth; 1.5 to 4.8 micron; 300 K; 4.7 micron; GaSb substrates; GaSb-InGaAsSb-AlGaAsSb; GaSb-InGaAsSb-GaInAsSb; GaSb/InGaAsSb/AlGaAsSb heterostructures; GaSb/InGaAsSb/GaInAsSb heterostructures; antimonide solid solutions; band energy diagram; detectivity; electrical parameters; interface barrier heights; liquid-phase epitaxy; long-wavelength photodiode design; mid-infrared photodiodes; narrow-gap layers; photoelectrical parameters; room temperature operation; spectral range; type II GaSb based photodiodes; type II broken-gap heterostructures; wide-gap layers;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20020348
