High-temperature characteristic in 1.3-μm-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition

Author

Sato, S. ; Satoh, S.

Author_Institution

Ricoh Co. Ltd., Miyagi, Japan

Volume

11

Issue

12

fYear

1999

Firstpage

1560

Lastpage

1562

Abstract

1.3-μm-range highly strained GaInNAs-GaAs double quantum-well ridge stripe lasers with different In contents (37% and 39%) grown by metal-organic chemical vapor deposition are demonstrated. The GaInNAs laser with In content of 37% emitting at 1.294 μm exhibited both a low threshold current density of 1.0 kA/cm² at 20/spl deg/C and a high characteristic temperature of 148 K in the temperature range of 20/spl deg/C-80/spl deg/C.

Keywords

Debye temperature; III-V semiconductors; MOCVD; gallium arsenide; indium compounds; infrared sources; laser transitions; optical fabrication; quantum well lasers; semiconductor growth; 1.294 mum; 1.3 mum; 1.3-/spl mu/m-range highly strained GaInNAs ridge stripe lasers; 148 K; 20 C; 20 to 80 C; GaInNAs laser; GaInNAs-GaAs; GaInNAs-GaAs double quantum-well ridge stripe lasers; In contents; MOCVD growth; high characteristic temperature; high-temperature characteristic; low threshold current densit; metal-organic chemical vapor deposition; temperature range; Chemical lasers; Chemical vapor deposition; Electrons; Gallium arsenide; Indium phosphide; Nitrogen; Semiconductor lasers; Substrates; Temperature distribution; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.806846

Filename

806846