Title :
Effect of a thin ionized-metal-plasma deposited Cu layer on the properties and thermal stability of Cu-TaN-SiO2-Si structures
Author :
Zhang, D.H. ; Loh, S.W. ; Li, C.Y. ; Liu, Rong ; Wee, Andrew T.S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fDate :
12/1/2001 12:00:00 AM
Abstract :
Cu-TaN-SiO2-Si structures, fabricated in a three-in-one system, were systematically investigated using various techniques. By depositing a thin plasma-metal-plasma (IMP) Cu layer on the TaN barrier prior to the copper film deposited using metal-organic chemical vapor deposition, the sheet resistance, uniformity, and adhesion of the metal in the Cu-TaN-SiO2-Si structures can be significantly improved. The thermal stability of the structures can also be enhanced due to the reduction of Cu diffusion and out-diffusion of Si, Ta, and O elements. These observations are of great value for application of chemical vapor deposition Cu-IMP Cu in multilevel interconnects of deep-submicron integrated circuits
Keywords :
MIS structures; MOCVD; adhesion; copper; integrated circuit interconnections; integrated circuit technology; metallic thin films; metallisation; rapid thermal annealing; thermal stability; Cu diffusion; Cu metallization; Cu-TaN-SiO2-Si; Cu-TaN-SiO2-Si structures; O; Si; Ta; TaN barrier; deep-submicron integrated circuits; metal-organic CVD; multilevel interconnects; plasma-metal-plasma Cu layer; rapid thermal annealing; secondary ion mass spectroscopy; sheet resistance; thermal stability; uniformity; Adhesives; Application specific integrated circuits; Chemical elements; Chemical vapor deposition; Circuit stability; Copper; Integrated circuit interconnections; Plasma chemistry; Plasma stability; Thermal stability;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/7298.995830
