Title :
Analysis of erratic bits in flash memories
Author :
Chimenton, Andrea ; Pellati, Paolo ; Olivo, Piero
Author_Institution :
Dipt. di Ingegneria, Ferrara Univ., Italy
fDate :
12/1/2001 12:00:00 AM
Abstract :
This work presents experimental results concerning erratic behaviors in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injection
Keywords :
fault diagnosis; flash memories; integrated circuit reliability; integrated circuit testing; semiconductor storage; voltage measurement; flash memories; integrated circuit reliability; linear relationship; semiconductor memories; single erase; threshold voltage dynamics; Capacitance; Flash memory; Integrated circuit reliability; Nonvolatile memory; Semiconductor device reliability; Semiconductor memory; Shape control; Testing; Threshold voltage; Tunneling;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/7298.995831
