DocumentCode
1273057
Title
High power (>100 mW), low crosstalk (<0.4%), individually addressed laser diodes
Author
Mehuys, D. ; Welch, D.F. ; Nam, D.W. ; Scifres, D.R.
Author_Institution
Spectra Diode Labs., San Jose, CA, USA
Volume
26
Issue
23
fYear
1990
Firstpage
1955
Lastpage
1957
Abstract
Individually addressed high power dual channel diode lasers have been fabricated on 50 mu m centres and bonded in a p-side up configuration. The diodes emit in a single spatial mode at greater than 100 mW CW output power, and have a total measured crosstalk of as low as 0.37% (-24 dB) at 250 Hz, and -33 dB at 1 MHz.
Keywords
semiconductor laser arrays; 1 MHz; 100 mW; 250 Hz; 33 to 24 dB; 50 micron; CW output power; high power dual channel diode lasers; individually addressed laser diodes; low crosstalk; measured crosstalk; p-side up configuration; single spatial mode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901265
Filename
59541
Link To Document