Title :
High power (>100 mW), low crosstalk (<0.4%), individually addressed laser diodes
Author :
Mehuys, D. ; Welch, D.F. ; Nam, D.W. ; Scifres, D.R.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
Abstract :
Individually addressed high power dual channel diode lasers have been fabricated on 50 mu m centres and bonded in a p-side up configuration. The diodes emit in a single spatial mode at greater than 100 mW CW output power, and have a total measured crosstalk of as low as 0.37% (-24 dB) at 250 Hz, and -33 dB at 1 MHz.
Keywords :
semiconductor laser arrays; 1 MHz; 100 mW; 250 Hz; 33 to 24 dB; 50 micron; CW output power; high power dual channel diode lasers; individually addressed laser diodes; low crosstalk; measured crosstalk; p-side up configuration; single spatial mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901265
