Resonant-cavity-enhanced high-speed Si photodiode grown by epitaxial lateral overgrowth

Author

Schaub, J.D. ; Li, R. ; Schow, C.L. ; Campbell, J.C. ; Neudeck, G.W. ; Denton, J.

Author_Institution

Texas Univ., Austin, TX, USA

Volume

11

Issue

12

fYear

1999

Firstpage

1647

Lastpage

1649

Abstract

We report a resonant cavity Si photodiode grown by merged epitaxial lateral overgrowth. At a reverse bias of 5 V, the dark current was 2.7 pA and the bandwidth exceeded 34 GHz. The peak quantum efficiencies ranged from 42% at 704 nm to 31% at 836 nm. This is the highest speed reported for a Si p-i-n photodiode and the highest bandwidth-efficiency product for any Si-based photodetector.

Keywords

dark conductivity; epitaxial growth; high-speed optical techniques; optical fabrication; optical resonators; photodetectors; photodiodes; semiconductor growth; silicon; 2.7 pA; 42 to 31 percent; 5 V; 704 to 836 nm; Si; Si p-i-n photodiode; Si-based photodetector; dark current; epitaxial lateral overgrowth; highest bandwidth-efficiency product; merged epitaxial lateral overgrowth; peak quantum efficiencies; resonant cavity Si photodiode; resonant-cavity-enhanced high-speed Si photodiode; reverse bias; Bandwidth; Detectors; Electromagnetic wave absorption; Mirrors; Molecular beam epitaxial growth; PIN photodiodes; Photodetectors; Resonance; Silicon; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.806875

Filename

806875