Title :
Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
Author :
Srinivasan, V.S.S. ; Chopra, S. ; Karkare, P. ; Bafna, P. ; Lashkare, S. ; Kumbhare, P. ; Kim, Y. ; Srinivasan, S. ; Kuppurao, S. ; Lodha, S. ; Ganguly, Udayan
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
Abstract :
We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector application. Epitaxial Si:C process is used to deposit n+/p/n+ layers which are fabricated into 300-nm-diameter vertical punchthrough diodes. High on-current density of >; 1 MA/cm2 and high on/off current ratio of >; 250 and >; 4700 (at opposite polarities) are observed. A switching speed of <; 10 ns is measured. On-voltage designability is demonstrated by tuning the p-region doping and length. The comparison of experimental IV with Sentaurus TCAD-simulated IV characteristics confirms the punchthrough mechanism. Comparison with other bipolar RRAM selector technologies highlights the overall advantages of punchthrough-based selector.
Keywords :
bipolar memory circuits; carbon; electric resistance; elemental semiconductors; random-access storage; semiconductor diodes; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; technology CAD (electronics); tuning; Sentaurus TCAD-simulated I-V characteristics; Si:C; bipolar resistance RAM selector application; epitaxial punchthrough-diode-based bipolar RRAM selector; high on-current density; on-off current ratio; on-voltage designability; p-region doping; p-region length; size 300 nm; switching speed; vertical punchthrough diodes; Arrays; Doping; Epitaxial growth; Resistance; Silicon; Switches; Bipolar resistance RAM (RRAM); punchthrough; selector;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2209394
