Title :
A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors
Author :
Pan, Andrew ; Chui, Chi On
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
Abstract :
Tunneling field-effect transistors (TFETs) are being widely investigated as a post-CMOS technology; however, despite significant experimental efforts, no quantitatively accurate device models are available. We derive an expression which provides the complete current characteristics of the double-gate TFET and demonstrate its agreement with simulation. This model will be useful in the design and circuit analysis of TFETs.
Keywords :
CMOS integrated circuits; field effect transistors; semiconductor device models; tunnel transistors; TFET design; circuit analysis; double-gate TFET; double-gate tunneling field-effect transistors; post-CMOS technology; quasianalytical device model; Analytical models; Doping; Electric potential; Logic gates; Semiconductor process modeling; Transistors; Tunneling; Double gate (DG); tunnel field-effect transistor (TFET); tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2208933
