DocumentCode :
1273262
Title :
Through-Strata-Via (TSV) Parasitics and Wideband Modeling for Three-Dimensional Integration/Packaging
Author :
Xu, Zheng ; Lu, Jian-Qiang
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Volume :
32
Issue :
9
fYear :
2011
Firstpage :
1278
Lastpage :
1280
Abstract :
This letter reports on techniques of full-wave extractions and analytical calculations to investigate the through-strata-via (TSV) parasitics in 3-D integration/packaging. Both methods suggest close TSV RLGC results over the entire frequency range of interest. A wideband SPICE model is generated from the TSV electromagnetic solutions with good agreement for both magnitudes and phases of return loss and insertion loss. Further sensitivity analysis results indicate that the isolation layer thickness weighs most in the signal gain at 20 GHz. This letter provides some insight to TSV electrical characteristics and helps TSV physical design to maximize the benefits of 3-D systems.
Keywords :
SPICE; integrated circuit packaging; isolation technology; sensitivity analysis; three-dimensional integrated circuits; 3D packaging; TSV RLGC; TSV electrical characteristics; TSV electromagnetic solution; TSV parasitics; TSV physical design; full-wave extraction techniques; insertion loss; isolation layer; return loss; sensitivity analysis; three-dimensional integration; through-strata-via parasitics; wideband SPICE model; Copper; Integrated circuit modeling; Packaging; SPICE; Solid modeling; Three dimensional displays; Through-silicon vias; 3-D integration; Modeling; RLGC extraction; packaging; sensitivity analysis; through-strata-via (TSV);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2158511
Filename :
5954151
Link To Document :
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