Formation of Graphene p-n Junction via Complementary Doping

Author

Yu, Tianhua ; Kim, Changdong ; Liang, Chen-Wei ; Yu, Bin

Author_Institution

Coll. of Nanoscale Sci. & Eng., SUNY - Univ. at Albany, Albany, NY, USA

Volume

32

Issue

8

fYear

2011

Firstpage

1050

Lastpage

1052

Abstract

We demonstrate the formation of a p-n junction in 2-D graphene through complementary doping. A shift of the Dirac point is observed with increased electrical stressing voltage, indicating the modification of electrostatic charge distribution in the material system. Both graphene and graphene/metal contact resistances show significant decrease after electrical stressing. Carrier mobility is affected due to the charge modification. By combining hydrogen silsesquioxane coating and electrical stressing, local doping in graphene is controlled, and a p-n junction can be formed.

Keywords

carrier mobility; contact resistance; doping; graphene; p-n junctions; 2D graphene; C; Dirac point; carrier mobility; complementary doping; electrical stressing voltage; electrostatic charge distribution; graphene p-n junction; graphene/metal contact resistance; hydrogen silsesquioxane coating; material system; Coatings; Contact resistance; Doping; Metals; P-n junctions; Resistance; Substrates; Breakdown; doping; electrical stressing; graphene; p-n junction;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2158382

Filename

5954152