Title :
Low temperature dependence of the hole impact ionisation constants determined from PMOS transistors
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
Results on the variation of the hole impact ionisation constants Ai and Bi with temperature are presented. Ai and Bi were determined using a substrate current model for MOS devices. It was found that for the PMOS devices, Ai and Bi both decrease with temperature.
Keywords :
impact ionisation; insulated gate field effect transistors; semiconductor device models; PMOS transistors; hole impact ionisation constants; low temperature operation; p-channel MOSFETs; scaling; substrate current model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901277
