Title :
MOCVD grown carbon-doped graded-base AlGaAs/GaAs HBTs
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
AlGaAs/GaAs HBTs with compositionally-graded carbon-doped base layers were grown by conventional low-pressure MOCVD for the first time. A high current gain of 100 obtained for a very high base doping of 8*1019 cm-3 indicates the high crystal quality of the AlGaAs graded base layer.
Keywords :
III-V semiconductors; aluminium compounds; carbon; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; AlGaAs graded base layer; AlGaAs-GaAs; AlGaAs:C; GaAs:C; HBTs; compositionally graded C-doped base; current gain; graded-base; high base doping; high crystal quality; low-pressure MOCVD; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901278
