• DocumentCode
    1273592
  • Title

    MOCVD grown carbon-doped graded-base AlGaAs/GaAs HBTs

  • Author

    Ito, H.

  • Author_Institution
    NTT LSI Labs., Kanagawa, Japan
  • Volume
    26
  • Issue
    23
  • fYear
    1990
  • Firstpage
    1977
  • Lastpage
    1978
  • Abstract
    AlGaAs/GaAs HBTs with compositionally-graded carbon-doped base layers were grown by conventional low-pressure MOCVD for the first time. A high current gain of 100 obtained for a very high base doping of 8*1019 cm-3 indicates the high crystal quality of the AlGaAs graded base layer.
  • Keywords
    III-V semiconductors; aluminium compounds; carbon; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; AlGaAs graded base layer; AlGaAs-GaAs; AlGaAs:C; GaAs:C; HBTs; compositionally graded C-doped base; current gain; graded-base; high base doping; high crystal quality; low-pressure MOCVD; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901278
  • Filename
    59543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1273592