Title :
A wide-band push-pull GaAs monolithic active isolator
Author :
Ali, Fazal ; Podell, Allen
Author_Institution :
Pacific Monolithics, Sunnyvale, CA, USA
Abstract :
A 2-6-GHz push-pull GaAs monolithic active isolator has been designed and tested. This balanced MESFET isolator has better than 18-dB reverse isolation of 6 GHz and provides greater than 15-dB input and output return loss across the band. This small (actual chip area 12 mil*24 mil) isolator chip draws 20 mA of current from a single +5-V supply. The compact chip size makes it an ideal candidate for impedance matching for monolithic subsystems in which a ferrite isolator is not practical.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave isolators; 15 dB; 2 to 6 GHz; 20 mA; 5 V; GaAs; MMIC; SHF; balanced MESFET isolator; broadband type; impedance matching; monolithic active isolator; monolithic subsystems; single +5-V supply; wideband push-pull type; Circuits; Ferrites; Gallium arsenide; Impedance matching; Isolators; MESFETs; MMICs; Radio frequency; Reflection; Wideband;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
