40-Gb/s ICs for future lightwave communications systems

Author

Otsuji, Taiichii ; Imai, Yuhki ; Sano, Eiichi ; Kimura, Shunji ; Yamaguchi, Satoshi ; Yoneyama, Mikio ; Enoki, Takatomo ; Umeda, Yohtaro

Author_Institution

NTT Syst. Electron. Labs., Kanagawa, Japan

Volume

32

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1363

Lastpage

1370

Abstract

This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future lightwave communications systems. A 0.1-μm gate InAlAs-InGaAs high electron mobility transistors (HEMTs) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 10 Gb/s

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; demultiplexing equipment; digital communication; distributed amplifiers; field effect analogue integrated circuits; field effect digital integrated circuits; flip-flops; gallium arsenide; indium compounds; integrated circuit packaging; multiplexing equipment; optical communication equipment; optical fibre communication; time division multiplexing; wavelength division multiplexing; wideband amplifiers; 0.1 micron; 10 Gbit/s; IC fabrication; InAlAs-InGaAs; InAlAs-InGaAs HEMTs; InP; InP recess etch stopper; TDM; WDM; amplifying operation; analog ICs; circuit design; data-multiplexing; demultiplexing; digital ICs; high electron mobility transistors; lightwave communications systems; packaging technologies; Bit rate; Circuits; Demultiplexing; HEMTs; Optical amplifiers; Optical receivers; Optical transmitters; Packaging; WDM networks; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.628741

Filename

628741