Title :
20-40 Gb/s 0.2-μm GaAs HEMT chip set for optical data receiver
Author :
Lang, Manfred ; Wang, Zhi-Gong ; Lao, Zhihao ; Schlechtweg, Michael ; Thiede, Andreas ; Rieger-Motzer, Michaela ; Sedler, Martin ; Bronner, Wolfgang ; Kaufel, Gudrun ; Köhler, Klaus ; Hulsmann, Axel ; Raynor, Brian
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
9/1/1997 12:00:00 AM
Abstract :
Using our 0.2-μm AlGaAs-GaAs-AlGaAs quantum well high electron mobility transistor (HEMT) technology, we have developed a chip set for 20-40 Gb/s fiber-optical digital transmission systems. In this paper we describe five receiver chips: a limiting amplifier with a differential gain of 17 dB and a 3 dB bandwidth of 29.3 GHz, a 40 Gb/s clock recovery, a data decision and a 1:4 demultiplexer, both for bit rates of more than 40 Gb/s, and a static 1:4 divider with operating frequencies up to 30 GHz. All presented chips were characterized on wafer with 50-Ω coplanar test probes
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; data communication; data communication equipment; decision circuits; demultiplexing equipment; differential amplifiers; digital communication; field effect analogue integrated circuits; field effect digital integrated circuits; frequency dividers; gallium arsenide; optical receivers; wideband amplifiers; 0.2 micron; 17 dB; 1:4 demultiplexer; 20 to 40 Gbit/s; 29.3 GHz; 30 GHz; AlGaAs-GaAs-AlGaAs; AlGaAs-GaAs-AlGaAs HEMT; GaAs HEMT chip set; clock recovery; coplanar test probes; data decision; fiber-optical digital transmission; high electron mobility transistor; limiting amplifier; optical data receiver; quantum well HEMT technology; receiver chips; static 1:4 divider; Bandwidth; Differential amplifiers; Electron optics; Gain; Gallium arsenide; HEMTs; MODFETs; Optical amplifiers; Optical receivers; Stimulated emission;
Journal_Title :
Solid-State Circuits, IEEE Journal of
