Title :
High-power and high temperature long-term stability of Al-free 950 nm laser structures on GaAs
Author :
Beister, G. ; Erbert, G. ; Knauer, A. ; Maege, J. ; Ressel, P. ; Sebastian, J. ; Staske, R. ; Wenzel, H.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
fDate :
9/16/1999 12:00:00 AM
Abstract :
Al-free InGaAs/InGaAsP/InGaP broad area lasers emitting at 950 nm show low degradation rates below 6×10-5/h, under conditions of 1.5 W emission power per 100 μm stripe width at 50°C and 4 W/200 μm at room temperature
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser reliability; laser stability; semiconductor lasers; 1.5 W; 100 mum; 200 mum; 298 K; 4 W; 50 C; 950 nm; Al-free laser structures; GaAs; InGaAs-InGaAsP-InGaP; InGaAs/InGaAsP/InGaP broad area lasers; broad area lasers; degradation rates; emission power; high temperature long-term stability; high-power long-term stability; room temperature; semiconductor laser diodes; stripe width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991152
