A 50-W low distortion GaAs MESFET for digital cellular base stations

Author

Ono, F. ; Singu, Z. ; Asano, K. ; Morikawa, J. ; Kuzuhara, M. ; Emori, F.

Author_Institution

Compound Semicond. Device Div., NEC Corp., Kawasaki, Japan

Volume

32

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1402

Lastpage

1404

Abstract

A 50-W low distortion GaAs MESFET for L-band has been successfully developed by optimizing chip design and adopting nearly class-B push-pull operation. The newly developed FET achieved a P_{1 dB} of 47.1 dBm (51.3 W) with a linear gain (GL) of 13.1 dB and the maximum drain efficiency of 57% (f=1.5 GHz, V_DS=10 V, I_DS=3%I_dss). A saturation output power of 47.3 dBm (53.7 W) has also been obtained. This is the highest output power reported so far of GaAs FETs considering an operation at nearly class B. In addition, the FETs exhibited both good linearity and distortion performances. The newly developed FETs will contribute to the improvement in performance of digital cellular base station systems

Keywords

III-V semiconductors; UHF field effect transistors; cellular radio; digital radio; electric distortion; gallium arsenide; power MESFET; power field effect transistors; 1.5 GHz; 10 V; 13.1 dB; 50 to 51.3 W; 57 percent; GaAs; GaAs MESFET; L-band; UHF device; chip design optimisation; class-B push-pull operation; digital cellular base stations; low distortion MESFET; saturation output power; thermal design; Chip scale packaging; Decision support systems; Design optimization; FETs; Gain; Gallium arsenide; L-band; Linearity; MESFETs; Power generation;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.628749

Filename

628749