A voltage tunable 35 GHz monolithic GaAs FECTED oscillator

Author

Lübke, K. ; Scheiber, H. ; Thim, H.

Author_Institution

Johannes Kepler Univ., Linz, Austria

Volume

1

Issue

2

fYear

1991

Firstpage

35

Lastpage

37

Abstract

Monolithically integrated FECTED (field-effect controlled transferred electron device) oscillators have been fabricated with high yield, high reliability, and precise frequency control. With unoptimized circuits, 12 mW with 1.4% efficiency in CW (continuous wave) operation and 25 mW with 2% efficiency in pulsed operation have been obtained. These results represent the highest power output and efficiency yet for monolithic TED and FET oscillator in this frequency range.<>

Keywords

Gunn devices; III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave oscillators; tuning; variable-frequency oscillators; 12 mW; 2 percent; 25 mW; 35 GHz; CW operation; EHF; FECTED oscillator; FET; GaAs; MM-wave type; TED; VCO; VFO; field-effect controlled; frequency control; high reliability; high yield; millimetre wave region; monolithic oscillator; pulsed operation; transferred electron device; voltage tunable; Circuits; Dielectrics; Electrons; FETs; Frequency; Gallium arsenide; Gunn devices; MMICs; Voltage; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.80705

Filename

80705