• DocumentCode
    1274079
  • Title

    Effect of interdiffusion on dark current response of GaInP/GaAs quantum well infrared photodetectors

  • Author

    Micallef, J. ; Brincat, A.

  • Author_Institution
    Dept. of Microelectron., Malta Univ., Malta
  • Volume
    35
  • Issue
    19
  • fYear
    1999
  • fDate
    9/16/1999 12:00:00 AM
  • Firstpage
    1662
  • Lastpage
    1664
  • Abstract
    The dark current response of interdiffused GaInP/GaAs quantum well intersubband infrared photodetectors is theoretically analysed for the case of group-III-only interdiffusion. The abrupt carrier confinement profile that is maintained after interdiffusion exhibits an increase in barrier height, and a significant reduction in the dark current of the interdiffused photodetector can be achieved
  • Keywords
    III-V semiconductors; chemical interdiffusion; dark conductivity; gallium arsenide; gallium compounds; indium compounds; infrared detectors; quantum well devices; semiconductor quantum wells; Ga0.51In0.49P-GaAs; GaInP/GaAs QWIP; GaInP/GaAs quantum well infrared photodetectors; abrupt carrier confinement profile; barrier height; dark current response; group-III-only interdiffusion; interdiffusion effect; peak detection wavelength tuning; quantum well intersubband infrared photodetectors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991113
  • Filename
    807057
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1274079