DocumentCode
1274086
Title
High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode
Author
Fukano, H. ; Muramoto, Y. ; Takahata, K. ; Matsuoka, Y.
Author_Institution
NTT Photonics Labs., Kanagawa, Japan
Volume
35
Issue
19
fYear
1999
fDate
9/16/1999 12:00:00 AM
Firstpage
1664
Lastpage
1665
Abstract
A high-efficiency uni-travelling carrier (UTC) photodiode has been developed which employs an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD shows a maximum responsivity of 0.48 A/W even with an absorption layer as thin as 280 nm, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical receivers; photodiodes; 1.5 V; 280 nm; 40 Gbit/s; InGaAs-InGaAsP-InP; InGaAs/InGaAsP/InP; absorption layer; edge-illuminated refracting-facet photodiode; edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode; high output peak-to-peak voltage; high-efficiency uni-travelling carrier photodiode; maximum responsivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991148
Filename
807058
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