Title :
High power 4.6 μm LEDs for CO detection grown by LPE
Author :
Krier, A. ; Gao, H. ; Sherstnev, V. ; Yakovlev, Y.
Author_Institution :
Dept. of Phys., Lancaster Univ., UK
fDate :
9/16/1999 12:00:00 AM
Abstract :
High-power light-emitting diodes operating at 4.6 μm with potential for use in an optical carbon monoxide sensor have been fabricated by liquid phase epitaxy (LPE) with a pulsed output power in excess of 1 mW at room temperature. The InAs0.89Sb0.11 in the LED active region was purified using rare earth ion gettering of the growth solution during epitaxy
Keywords :
III-V semiconductors; gas sensors; getters; indium compounds; light emitting diodes; liquid phase epitaxial growth; optical sensors; semiconductor growth; 1 mW; 4.6 mum; CO; CO detection; InAs0.89Sb0.11; LED active region; LPE growth; growth solution; high-power LEDs; liquid phase epitaxy; optical CO sensor; pulsed output power; purification; rare earth ion gettering; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991142
