DocumentCode
1274103
Title
Circuit Design-Oriented Stochastic Piecewise Modeling of the Postbreakdown Gate Current in MOSFETs: Application to Ring Oscillators
Author
Martin-Martinez, Javier ; Kaczer, Ben ; Degraeve, Robin ; Roussel, Philippe J. ; Rodriguez, Rosana ; Nafria, Montserrat ; Aymerich, Xavier ; Dierickx, B. ; Groeseneken, Guido
Author_Institution
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Bellaterra, Spain
Volume
12
Issue
1
fYear
2012
fDate
3/1/2012 12:00:00 AM
Firstpage
78
Lastpage
85
Abstract
A methodology to incorporate the MOSFET gate dielectric breakdown (BD) failure mechanism in the design of complex systems is presented. The model accounts for the statistical nature of the BD phenomenon, is easily extensible to different device geometries and operation conditions (following the established scaling rules for the mechanism), considers the stress history, and can be easily implemented in circuit simulation tools. Device level characterization of the BD mechanism is presented, which is the base for model parameter extraction. The model has been introduced in a circuit simulator to show its suitability for evaluation of the BD effect in circuits and their reliability, taking ring oscillators as example.
Keywords
MOSFET; oscillators; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; stress analysis; BD mechanism; MOSFET gate dielectric breakdown failure mechanism; circuit design-oriented stochastic piecewise modeling; circuit reliability; circuit simulation tools; device geometries; device level characterization; model parameter extraction; postbreakdown gate current; ring oscillators; stress history; Current measurement; Dielectrics; Electric breakdown; Integrated circuit modeling; Logic gates; Stress; Weibull distribution; CMOS; Circuit simulation; dielectric breakdown; reliability;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2011.2162238
Filename
5955107
Link To Document