DocumentCode
1274122
Title
AlGaN/GaN HBTs using regrown emitter
Author
Limb, J.B. ; McCarthy, L. ; Kozodoy, P. ; Xing, H. ; Ibbetson, J. ; Smorchkova, Y. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
35
Issue
19
fYear
1999
fDate
9/16/1999 12:00:00 AM
Firstpage
1671
Lastpage
1673
Abstract
AlGaN/GaN HBTs using regrown emitter AlGaN/GaN HBTs have been realised using the regrown emitter method. The device structure consists of an n-GaN collector, p-GaN base, and selectively grown AlGaN emitter. The HBTs were grown using metal organic chemical vapour deposition on sapphire substrate. The emitter was grown selectively on a pn junction diode after it was patterned with SiN. A common emitter curve showing low-leakage has been obtained
Keywords
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; heterojunction bipolar transistors; leakage currents; semiconductor device measurement; semiconductor growth; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HBTs; SiN; SiN patterning; common emitter curve; low-leakage; metal organic chemical vapour deposition; n-GaN collector; p-GaN base; pn junction diode; regrown emitter method; sapphire substrate; selectively grown AlGaN emitter;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991129
Filename
807063
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