Title :
Doped multichannel AlAs0.56Sb0.44/In0.53 Ga0.47As field effect transistors
Author :
Dumka, D.C. ; Cueva, G. ; Adesida, I. ; Hier, H. ; Aina, O.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
9/16/1999 12:00:00 AM
Abstract :
A depletion-mode doped-channel field effect transistor (DCFET) using an AlAs0.56Sb0.44/In0.53Ga0.47 As heterostructure with multiple channels and a gate-length of 1.0 μm is presented. The device structure is grown by molecular beam epitaxy and consists of three doped In0.53Ga0.47As channels separated by undoped AlAs0.56Sb0.44 layers. A zero gate-bias saturation current density of 350 mA/mm, extrinsic transconductance as high as 250 mS/mm, a unity current gain cutoff frequency of 18 GHz, and a maximum oscillation frequency of 60 GHz are reported. This multiple channel approach results in wide linearity of the DC and RF performances of the device
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; current density; gallium arsenide; indium compounds; microwave field effect transistors; molecular beam epitaxial growth; semiconductor device measurement; 1 mum; 18 GHz; 250 mS/mm; 60 GHz; AlAs0.56Sb0.44-In0.53Ga0.47 As; AlAs0.56Sb0.44/In0.53Ga0.47 As; DC performance linearity; InP; InP substrate; RF performance linearity; S-parameter measurements; depletion-mode doped-channel FET; doped multichannel FET; extrinsic transconductance; gate-length; maximum oscillation frequency; molecular beam epitaxy; multiple channels; unity current gain cutoff frequency; zero gate-bias saturation current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991101
