Title :
Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes
Author :
Elgaid, K. ; Li, Xu ; Williamson, F. ; McLelland, H. ; Ferguson, S.M. ; Holland, M.C. ; Beaumont, S.P. ; Thayne, I.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
9/16/1999 12:00:00 AM
Abstract :
The authors show that in a GaAs HEMT-based monolithic millimetre-wave integrated circuit process flow, prior to gate metallisation the introduction of a hydrofluoric acid cleaning process after gate recess etching results in a significant reduction in the Schottky diode turn-on voltage, series resistance and bias dependent RF junction resistance
Keywords :
HEMT integrated circuits; III-V semiconductors; Schottky diodes; aluminium compounds; circuit optimisation; field effect MMIC; gallium arsenide; microwave diodes; semiconductor device metallisation; surface cleaning; 240 MHz to 60 GHz; DC performance optimisation; GaAs; GaAs HEMT-based Schottky diodes; HEMT-based MMIC process flow; HF acid cleaning process; In0.2Ga0.8As-GaAs; RF performance optimisation; Schottky diode turn-on voltage; bias dependent RF junction resistance; gate metallisation; gate recess etching; series resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991104
