Medium Voltage–High Power Converter Topologies Comparison Procedure, for a 6.6 kV Drive Application Using 4.5 kV IGBT Modules

Author

Sanchez-Ruiz, Alain ; Mazuela, Mikel ; Alvarez, Silverio ; Abad, Gonzalo ; Baraia, Igor

Author_Institution

Electron. & Comput. Dept., Univ. of Mondragon, Mondragon, Spain

Volume

59

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

1462

Lastpage

1476

Abstract

This paper presents a general comparison procedure for medium voltage - high power multilevel converter topologies and semiconductors, which is mainly based on analyzing the performance limits of the converters output characteristics such as the output voltage, current, active power, efficiency, etc. Afterwards, the general procedure is applied to compare some of the most relevant converter topologies oriented to a 6.6 kV drive application supplying quadratic torque loads and using 4.5 kV IGBT modules. The paper concludes evaluating the comparison factors of the different converter topologies and selected semiconductors obtained by the proposed procedure. The proposed procedure can potentially be extrapolated to any desired application framework.

Keywords

electric drives; insulated gate bipolar transistors; power convertors; IGBT module; active power; drive application; medium voltage-high power multilevel converter topology; output voltage; quadratic torque load; voltage 4.5 kV; voltage 6.6 kV; Insulated gate bipolar transistors; Junctions; Load modeling; Modulation; Semiconductor device modeling; Switching frequency; Topology; AC drives; cascaded H-bridge (CHB); comparison procedure; flying capacitors (FC); insulated gate bipolar transistor (IGBT); medium voltage (MV) - high power (HP) applications converter; multilevel converters; neutral point clamped (NPC); semiconductors; stacked multicell (SMC);

fLanguage

English

Journal_Title

Industrial Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0278-0046

Type

jour

DOI

10.1109/TIE.2011.2162213

Filename

5955118