InGaAs MESFET´s for millimeter-wave low-noise applications

Author

Wang, Guan-Wu ; Kaliski, R. ; Chang, Y.

Author_Institution

Ford Microelectron. Inc., Colorado Springs, CO, USA

Volume

1

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

76

Lastpage

77

Abstract

It is reported that excellent device performance and uniformity can be achieved with 0.25- mu m gate InGaAs MESFET fabricated by the mixed manufacturing technology of metalorganic chemical vapor deposition (MOCVD) and ion implantation. An average unity gain cutoff frequency of 102 GHz with a standard deviation of 12 GHz is derived from the S-parameter measurements of 139 devices uniformly distributed on a 3-in-diameter GaAs wafer. Two-stage low-noise amplifiers fabricated by using these InGaAs MESFETs demonstrate a typical noise figure of 3.6 dB with an associated gain of 14.4 dB at 44 GHz.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; indium compounds; solid-state microwave devices; 0.25 micron; 102 GHz; 14.4 dB; 3.6 dB; 44 GHz; InGaAs; MESFET; MOCVD; S-parameter measurements; chemical vapor deposition; cutoff frequency; ion implantation; low-noise amplifiers; low-noise applications; metalorganic CVD; millimeter-wave; mixed manufacturing technology; two-stage LNA; Chemical technology; Chemical vapor deposition; Cutoff frequency; Indium gallium arsenide; Ion implantation; MESFETs; MOCVD; Manufacturing; Measurement standards; Millimeter wave technology;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.80732

Filename

80732