Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors

Author

Lee, Sang-Hyun ; Baek, Chang-Ki ; Park, Sooyoung ; Kim, Dong-Won ; Sohn, Dong Kyun ; Lee, Jeong-Soo ; Kim, Dae M. ; Jeong, Yoon-Ha

Author_Institution

Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

33

Issue

10

fYear

2012

Firstpage

1348

Lastpage

1350

Abstract

The low-frequency noise in the silicon nanowire field-effect transistor (SNWFET) is characterized using SNWFETs with different channel diameters d_NW. The current density and the simulation result indicate that the volume inversion as manifested by the spatial charge distribution is enhanced in smaller d_NW. The measured noise data are discussed based on the number and correlated mobility fluctuation model. It is shown that the low-frequency noise decreases in smaller d_NW. This d_NW-dependent noise behavior is clarified in terms of the effective oxide trap density and the fraction of inversion charges near the Si-SiO₂ interface.

Keywords

current density; elemental semiconductors; field effect transistors; nanowires; semiconductor device noise; silicon; silicon compounds; SNWFET; Si-SiO₂; channel diameters; channel-diameter-dependent low-frequency noise; correlated mobility fluctuation model; current density; effective oxide trap density; inversion charges; number model; silicon nanowire field-effect transistor; spatial charge distribution; volume inversion; Educational institutions; Electron traps; Logic gates; Low-frequency noise; Silicon; Transistors; Channel diameter; low-frequency noise; silicon nanowire field-effect transistor (SNWFET); volume inversion;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2209625

Filename

6287544