Buffer layers for high-quality epitaxial YBCO films on Si

Author

Fork, D.K. ; Fenner, D.B. ; Barrera, A. ; Phillips, J.M. ; Geballe, T.H. ; Connell, G.A.N. ; Boyce, J.B.

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

Volume

1

Issue

1

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

67

Lastpage

73

Abstract

Efforts aimed at producing device-quality YBa/sub 2/Cu/sub 3/O/sub 7- delta / (YBCO) films on Si, which have resulted in films with properties comparable to what can be achieved with conventional oxide substrates such as SrTiO/sub 3/, are described. It is reported how epitaxial YBCO films were grown on Si

Keywords

barium compounds; channelling; critical current density (superconductivity); high-temperature superconductors; strip lines; superconducting epitaxial layers; superconducting transition temperature; vapour phase epitaxial growth; yttrium compounds; 250 to 300 muohmcm; 300 K; 4.2 K; 77 K; 86 to 88 K; Si; YBa/sub 2/Cu/sub 3/O/sub 7- delta /-Y/sub 2/O/sub 3/ZrO/sub 2/-Si; channeling minimum yield; critical current densities; critical temperature; crystalline perfection; epitaxial YBCO films; far-infrared bolometers; high temperature superconductor; in situ process; in situ reaction patterned microstrip lines; intermediate buffer; ion channeling; noise; normal state resistivity; pulsed laser deposition; transition width; Buffer layers; Conductivity; Critical current density; Crystallization; Optical pulses; Pulsed laser deposition; Semiconductor films; Substrates; Temperature; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.80751

Filename

80751