An 11 GHz 3-V SiGe voltage controlled oscillator with integrated resonator

Author

Soyuer, Mehmet ; Burghartz, Joachim N. ; Ainspan, Herschel A. ; Jenkins, Keith A. ; Xiao, Peter ; Shahani, Arvin R. ; Dolan, Margaret S. ; Harame, David L.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

32

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1451

Lastpage

1454

Abstract

A 10.5- to 11-GHz fully monolithic voltage controlled oscillator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5% with an on-chip varactor-tuned resonator and for a control voltage of 0 to 3 V. The circuit draws less than 8 mA from a 3-V supply including the reference branch bias current

Keywords

Ge-Si alloys; MMIC oscillators; bipolar MMIC; integrated circuit noise; microwave oscillators; phase noise; semiconductor materials; varactors; voltage-controlled oscillators; 0 to 3 V; 10.5 to 11 GHz; MMIC oscillators; SiGe; bipolar technology; control voltage; integrated resonator; on-chip varactor-tuned resonator; oscillator phase noise; reference branch bias current; tuning range; voltage controlled oscillator; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Metallization; Microwave oscillators; Phase noise; Silicon germanium; Varactors; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.628762

Filename

628762