Title :
Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology
Author :
Groves, Rob ; Harame, David L. ; Jadus, Dale
Author_Institution :
Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA
fDate :
9/1/1997 12:00:00 AM
Abstract :
The behavior of on-chip, planar, spiral inductors fabricated over a conductive silicon substrate has been characterized over the temperature range from -55°C to +125°C. Quality factor (Q) was observed to decrease with increasing temperature at low frequency and increase with increasing temperature at high frequency. Inductance was seen to vary little over the temperature and frequency range. A SPICE model that incorporated the temperature dependence of the inductor´s parasitics was presented and shown to give excellent agreement with measured data over the full temperature and frequency range
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC; Q-factor; SPICE; inductors; semiconductor materials; -55 to 125 degC; BiCMOS technology; SPICE model; Si; SiGe-Si; parasitics; quality factor; spiral inductors; temperature dependence; Conductivity; Electrical resistance measurement; Germanium silicon alloys; Inductance; Inductors; Parasitic capacitance; RLC circuits; Silicon germanium; Spirals; Temperature dependence;
Journal_Title :
Solid-State Circuits, IEEE Journal of
