DocumentCode
1274773
Title
A low glitch 14-b 100-MHz D/A converter
Author
Tesch, Bruce J. ; Garcia, Juan C.
Author_Institution
Harris Semiconductor, Melbourne, FL, USA
Volume
32
Issue
9
fYear
1997
fDate
9/1/1997 12:00:00 AM
Firstpage
1465
Lastpage
1469
Abstract
A low glitch 14-b 100-MHz current output digital-to-analog converter (DAC) is described. In addition to segmentation of the four most significant bits (MSB´s) into 15 equally weighted current sources, a proportional-to-absolute-temperature (PTAT) switching voltage is applied to the current steering devices to minimize glitch over temperature. A bidirectional thin-film trim network and high β n-p-n devices reduce the amount of laser trimming required to achieve 14-b accuracy, resulting in less post-trim degradation of DAC linearity over temperature and the life of the chip. The converter has been fabricated in a 4-GHz/1.4-μm BiCMOS technology and exhibits a measured glitch energy of 0.5 pV·s (singlet). Settling time to within ±0.012% of the final value is ⩽20 ns for both rising and falling edges of a full scale step. Spurious free dynamic range (SFDR) for the described converter is 87 dBc at an update rate (fCLK) of 10 MHz and an output frequency (fOUT) of 2.03 MHz. The converter operates from +5 V and -5.2 V supplies and consumes 650 mW independent of conversion rate. The chip size is 4.09×4.09 mm including bond pads and electrostatic discharge (ESD) protection devices
Keywords
BiCMOS integrated circuits; current-mode logic; digital-analogue conversion; integrated circuit design; sampled data circuits; -5.2 V; 1.4 micron; 10 MHz; 100 MHz; 14 bit; 2.03 MHz; 4 GHz; 5 V; 650 mW; BiCMOS technology; DAC linearity; bidirectional thin-film trim network; bond pads; conversion rate; current output digital-to-analog converter; current steering devices; electrostatic discharge protection; equally weighted current sources; glitch energy; output frequency; post-trim degradation; proportional-to-absolute-temperature switching voltage; settling time; spurious free dynamic range; update rate; BiCMOS integrated circuits; Degradation; Digital-analog conversion; Electrostatic discharge; Energy measurement; Linearity; Semiconductor device measurement; Temperature; Thin film devices; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.628767
Filename
628767
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