High-performance double-recessed InAlAs/InGaAs power metamorphic HEMT on GaAs substrate

Author

Tu, Der-Wei ; Wang, Sujane ; Liu, J.S.M. ; Hwang, K.C. ; Kong, Wendell ; Chao, P.C. ; Nichols, Kirby

Author_Institution

Sanders Associates Inc., Nashua, NH, USA

Volume

9

Issue

11

fYear

1999

fDate

11/1/1999 12:00:00 AM

Firstpage

458

Lastpage

460

Abstract

Double-recess power metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates were successfully demonstrated. The In_0.53Al_0.47As/In_0.65Al_0.35As structures exhibited extrinsic transconductance of 1050 mS/mm and breakdown of 8.3 V, which are comparable to that of the InP power HEMT. Excellent maximum power added efficiency (PAE) of 60.2% with output power of 0.45 W/mm and record associated power gain of 17.1 dB were realized at 20 GHz. A maximum output power of 0.51 W/mm has also been demonstrated with the device. This is the first demonstration of high-efficiency K-band power MHEMT´s

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device breakdown; 1050 mS/mm; 17.1 dB; 20 GHz; 60.2 percent; 8.3 V; GaAs; GaAs substrate; In_0.53Al_0.47As-In_0.65Al_0.35As; InAlAs/InGaAs power HEMT; breakdown voltage; double-recessed HEMT; extrinsic transconductance; high electron mobility transistors; high-efficiency K-band power MHEMT; maximum power added efficiency; power gain; power metamorphic HEMT; Electric breakdown; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Power generation; Transconductance; mHEMTs;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.808035

Filename

808035