Dark current fixed pattern noise reduction for the 2/3-in two-million pixel HDTV STACK-CCD imager

Author

Sakaguchi, Natsue ; Nakamura, Nobuo ; Ohsawa, Shinji ; Endo, Yukio ; Matsunaga, Yoshiyuki ; Ooi, Kazushige ; Yoshida, Okio

Author_Institution

Video Digital LSI Design Sect., Toshiba Corp., Kawasaki, Japan

Volume

44

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1658

Lastpage

1662

Abstract

The fixed pattern noise reduction methods, surrounding channel stop structure and the hole accumulation operation, are proposed and evaluated for the 2/3-in two-million pixel STACK-CCD HDTV imager. The surrounding channel stop structure is surrounded by the channel stop region to suppress the fluctuation of the mean dark current from Si-SiO ₂ interface and the depletion layer of p-n junction. The measured fixed pattern note (FPN) and signal-to-noise (S/N) ratio are improved from 45 electrons down to 19 electrons and from 49 dB up to 54 dB under the condition of F.8 and 2000 lux at 333 K, respectively. Therefore, the 2/3-in two-million pixel HDTV handy-type color camera with high S/N ratio and low FPN can be obtained

Keywords

CCD image sensors; dark conductivity; high definition television; semiconductor device noise; television cameras; 0.667 in; 2 Mpixel; 333 K; HDTV STACK-CCD imager; S/N ratio; Si-SiO₂; channel stop structure; dark current fixed pattern noise; depletion layer; handy-type color camera; hole accumulation operation; mean dark current; noise reduction; Boron; Cameras; Colored noise; Dark current; Electrodes; Electrons; HDTV; Noise reduction; Pixel; Signal to noise ratio;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.628819

Filename

628819