Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display

Author

Kimura, Mutsumi ; Yudasaka, Ichio ; Kanbe, Sadao ; Kobayashi, Hidekazu ; Kiguchi, Hiroshi ; Seki, Shun-ichi ; Miyashita, Satoru ; Shimoda, Tatsuya ; Ozawa, Tokuro ; Kitawada, Kiyofumi ; Nakazawa, Takashi ; Miyazawa, Wakao ; Ohshima, Hiroyuki

Author_Institution

Base Technol. Res. Center, Seiko Epson Corp., Suwa, Japan

Volume

46

Issue

12

fYear

1999

fDate

12/1/1999 12:00:00 AM

Firstpage

2282

Lastpage

2288

Abstract

A high-resolution low-temperature polysilicon thin-film transistor driven light emitting polymer display (LT p-Si TFT LEPD) with integrated drivers has been developed. We adopted conductance control of the TFT and optimized design and voltage in order to achieve good gray scale and simple pixel circuit. A p-channel TFT is used in order to guarantee reliability in dc bias. An inter-layer reduces parasitic capacitance of bus lines. Because of the combination of the LT p-Si TFT and LEP, the display is thin, compact, and lightweight, as well as having low power consumption, wide viewing angle, and fast response

Keywords

driver circuits; electroluminescent displays; elemental semiconductors; optical polymers; silicon; thin film transistors; Si; bus line; conductance control; gray scale; high-resolution light emitting polymer display; integrated driver; low-temperature polysilicon thin film transistor; p-channel TFT; parasitic capacitance; pixel circuit; Driver circuits; Drives; Energy consumption; Liquid crystal displays; Open wireless architecture; Plastics; Polymers; Substrates; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.808054

Filename

808054