Analysis of low fixed pattern noise cell structures for photoconversion layer overlaid CCD or CMOS image sensors

Author

Ohsawa, Shinji ; Sasaki, Michio ; Miyagawa, Ryohei ; Matsunaga, Yoshiyuki

Author_Institution

Video Digital LSI Design Sect., Toshiba Corp., Yokohama, Japan

Volume

44

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1667

Lastpage

1671

Abstract

A new low fixed pattern noise (FPN) cell structure, which can be used for photoconversion layer overlaid CCD or CMOS image sensors, was proposed and analyzed with a two-dimensional (2-D) device simulator. One of the most serious problems for this type of image sensor is the mixing of signal charges of neighboring cells during signal charge readout. The magnitude of signal mixing was as much as 20% for the conventional 2/3-in 2-million pixel STACK-CCD cell structure. FPN was very visible as a result of this signal mixing. This time, a new cell structure was proposed and analyzed to reduce signal mixing and FPN. It was possible to reduce signal mixing to a low value of 0.7% of the signal level using the new cell structure

Keywords

CCD image sensors; CMOS integrated circuits; image sensors; integrated circuit modelling; integrated circuit noise; 0.667 in; 2D device simulation; 2E6 pixel; CCD image sensors; CMOS image sensors; STACK-CCD cell structure; low fixed pattern noise cell structures; photoconversion layer overlay; signal charge readout; signal mixing; two-dimensional device simulator; Analytical models; CMOS image sensors; Charge coupled devices; Charge-coupled image sensors; Electrodes; Image analysis; Image sensors; Pattern analysis; Photodiodes; Pixel;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.628821

Filename

628821