An epitaxially-grown charge modulation device

Author

Reich, Robert K. ; Mountain, Robert W. ; Robinson, McDonald ; McGonagle, William H. ; Loomis, Andrew H. ; Kosicki, Bernard B. ; Savoye, Eugene D.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

44

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1672

Lastpage

1678

Abstract

A charge modulation device (CMD) has been fabricated in a p-type epitaxial layer grown from the buried-channel silicon region of a charge-coupled device (CCD). Construction of the CMD directly above the CCD buried-channel and over the oxidized CCD transfer gates lowers the effective sense capacitance while providing isolation of the CMD source/drain regions. Responsivity values of 28 and 66 μV/e for feedback and no feedback conditions, respectively, were measured dynamically on test devices. Input-referred noise values of approximately four electrons r.m.s. were calculated from noise spectral density measurements assuming a low-pass filter 3 dB cutoff frequency of 5 MHz and correlated double sampling

Keywords

CCD image sensors; capacitance; feedback; integrated circuit noise; junction gate field effect transistors; modulation; semiconductor epitaxial layers; signal sampling; silicon; 5 MHz; CCD buried-channel; JFET device; Si; buried-channel silicon regio; charge-coupled device; correlated double sampling; epitaxially-grown charge modulation device; feedback; noise spectral density measurements; oxidized CCD transfer gates; p-type epitaxial layer; sense capacitance reduction; Capacitance; Charge coupled devices; Cutoff frequency; Density measurement; Electrons; Epitaxial layers; Feedback; Low pass filters; Silicon; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.628822

Filename

628822