• DocumentCode
    1275213
  • Title

    A physically-based C∞-continuous model for accumulation-mode SOI pMOSFETs

  • Author

    Iníguez, Benjamín ; Dessard, Vincent ; Flandre, Denis ; Gentinne, Bernard

  • Author_Institution
    Lab. de Microelectron., Univ. Catholique de Louvain, Belgium
  • Volume
    46
  • Issue
    12
  • fYear
    1999
  • fDate
    12/1/1999 12:00:00 AM
  • Firstpage
    2295
  • Lastpage
    2303
  • Abstract
    In this paper, we present a unified accumulation-mode (AM) SOI MOSFET model for circuit simulation. The model is valid in all the regimes of normal operation and includes explicit expressions of the drain current and total charges which have an infinite order of continuity; therefore, smooth transitions are assured. Short-channel effects have also been accounted for. We have finally proved that our model accurately fits the transistor characteristics for effective channel lengths down to 0.7-μm
  • Keywords
    MOSFET; semiconductor device models; silicon-on-insulator; 0.7 micron; C∞-continuous model; accumulation-mode SOI MOSFET; capacitance; circuit simulation; drain current; short-channel effect; total charge; CMOS technology; Capacitance measurement; Circuit simulation; Doping; MOS devices; MOSFET circuits; Semiconductor device modeling; Thin film devices; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.808063
  • Filename
    808063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1275213