Title :
A physically-based C∞-continuous model for accumulation-mode SOI pMOSFETs
Author :
Iníguez, Benjamín ; Dessard, Vincent ; Flandre, Denis ; Gentinne, Bernard
Author_Institution :
Lab. de Microelectron., Univ. Catholique de Louvain, Belgium
fDate :
12/1/1999 12:00:00 AM
Abstract :
In this paper, we present a unified accumulation-mode (AM) SOI MOSFET model for circuit simulation. The model is valid in all the regimes of normal operation and includes explicit expressions of the drain current and total charges which have an infinite order of continuity; therefore, smooth transitions are assured. Short-channel effects have also been accounted for. We have finally proved that our model accurately fits the transistor characteristics for effective channel lengths down to 0.7-μm
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; 0.7 micron; C∞-continuous model; accumulation-mode SOI MOSFET; capacitance; circuit simulation; drain current; short-channel effect; total charge; CMOS technology; Capacitance measurement; Circuit simulation; Doping; MOS devices; MOSFET circuits; Semiconductor device modeling; Thin film devices; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
