Analysis of GaAs OPFET with improved optical absorption under back illumination

Author

Roy, Nandita Saha ; Pal, B.B. ; Khan, R.U.

Author_Institution

Inst. of Technol., Banaras Hindu Univ., Varanasi, India

Volume

46

Issue

12

fYear

1999

fDate

12/1/1999 12:00:00 AM

Firstpage

2350

Lastpage

2353

Abstract

The effect of back illumination with improved optical absorption has been analyzed for an ion-implanted GaAs OPFET considering the Pearson IV distribution of impurities. Plots have been made for two photo voltages developed across the substrate active layer junction and the Schottky junction. The drain-source current is significantly enhanced for the device when a fiber is inserted up to the active layer substrate junction compared with the case where the finite substrate effect is taken into account

Keywords

III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; light absorption; phototransistors; semiconductor device models; GaAs; GaAs OPFET; Pearson IV impurity distribution; Schottky junction; back illumination; drain-source current; finite substrate effect; ion implantation; optical absorption; photo voltages; substrate active layer junction; Charge carrier processes; Detectors; Electromagnetic wave absorption; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Impact ionization; Lighting; Optical superlattices; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.808081

Filename

808081