CMOS active pixel sensor with on-chip successive approximation analog-to-digital converter

Author

Zhou, Zhimin ; Pain, Bedabrata ; Fossum, Eric R.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

44

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1759

Lastpage

1763

Abstract

The first CMOS active pixel sensor (APS) with on-chip column-parallel successive-approximation analog-to-digital converter (ADC) is reported. A 64×64 element CMOS APS implemented in a 1.2-μm n-well single-poly, double-metal process with 24-μm pixel pitch is integrated with a 64×1 array of column parallel successive approximation 8-b ADCs. Good image quality was observed. The capacitively-coupled ADCs dissipate approximately 1 μW-s/ksample and occupy 0.05 mm² of chip area

Keywords

CMOS integrated circuits; analogue-digital conversion; image resolution; image sensors; integrated circuit design; integrated circuit measurement; 1.2 mum; 24 mum; 4096 pixel; 64 pixel; ADC array; CMOS active pixel sensor; capacitively-coupled ADC; chip area; image quality; n-well single-poly double-metal process; on-chip column-parallel successive-approximation ADC; on-chip successive approximation analog-to-digital converter; pixel pitch; Analog-digital conversion; CMOS image sensors; CMOS process; CMOS technology; Crosstalk; Image quality; Image sensors; Pain; Sensor arrays; Space technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.628833

Filename

628833