DocumentCode
1275287
Title
Effects of thermal processes after silicidation on the performance of TiSi2/polysilicon gate device
Author
Jang, Se-Aug ; Kim, Tae-Kyun ; Yeo, In-Seok ; Kim, Hyeon-Soo ; Lee, Sahng-Kyoo
Author_Institution
Semicond. Adv. Res. Div., Hyundai Electron. Ind. Co. Ltd., Kyoungki, South Korea
Volume
46
Issue
12
fYear
1999
fDate
12/1/1999 12:00:00 AM
Firstpage
2353
Lastpage
2356
Abstract
The effects of thermal processes after silicidation on the gate depletion, threshold voltage (Vth) shift, drive current, and sheet resistance of TiSi2/polysilicon (Ti-polycide) gate devices are evaluated. The dopant depletion of the polysilicon film, which is known to increase the Vth and to degrade the drive-current, increases with increasing temperature of the post-thermal process. However, the Vth roll-off characteristic in nMOSFETs is enhanced with increasing temperature. Furthermore, the drive-current is significantly degraded by the gate reoxidation process. The sheet resistance of the Ti-polycide gate increases with gate reoxidation as well as with increased post-thermal processes
Keywords
MOSFET; annealing; doping profiles; rapid thermal annealing; semiconductor device measurement; silicon; titanium compounds; RTA; TiSi2-Si; TiSi2/polysilicon gate device; annealing; dopant depletion; drive current; gate depletion; gate reoxidation process; nMOSFETs; polycide gate; polysilicon film; post-thermal process temperature; roll-off characteristic; sheet resistance; silicidation; thermal processes; threshold voltage shift; Annealing; Conductivity; MOS devices; MOSFET circuits; Nitrogen; Silicidation; Temperature; Thermal degradation; Thermal resistance; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.808083
Filename
808083
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