Title :
Frame-transfer CMOS active pixel sensor with pixel binning
Author :
Zhou, Zhimin ; Pain, Bedabrata ; Fossum, Eric R.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
10/1/1997 12:00:00 AM
Abstract :
The first frame-transfer CMOS active pixel sensor (APS) is reported. The sensor architecture integrates an array of active pixels with an array of passive memory cells. Charge integration amplifer-based readout of the memory cells permits binning of pixels for variable resolution imaging. A 32×32 element prototype sensor with 24-μm pixel pitch was fabricated in 1.2-μm CMOS and demonstrated
Keywords :
CMOS integrated circuits; array signal processing; image resolution; image sensors; integrated circuit design; integrated circuit technology; 1.2 mum; 1024 pixel; 24 mum; 32 pixel; active pixel array; charge integration amplifer-based readout; frame-transfer CMOS active pixel sensor; passive memory cell array; pixel binning; pixel pitch; sensor architecture; variable resolution imaging; CMOS image sensors; Capacitors; Clamps; Image resolution; Pain; Pixel; Prototypes; Sensor arrays; Switches; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
