A bipolar image detector with smart functions

Author

Shinohara, Mahito ; Sugawa, Shigetoshi ; Nakamura, Yoshio ; Ohmi, Tadahiro

Author_Institution

Device Dev. Center, Canon Inc., Kanagawa, Japan

Volume

44

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1769

Lastpage

1776

Abstract

A new type of bipolar image detector has been developed which consists of bipolar sensor cells, bipolar frame memory cells, and signal transfer circuits. The imager with 100 H×70 V pixels was designed to detect near-infrared LED rays exactly and rapidly, and was fabricated using 2-μm Bi-CMOS process. The device, utilizing operations specific to bipolar cells, amplifies signal charges and cancels noises to have a high signal-to-noise ratio (S/N) immune to a long time hold. It also offers several novel functions such as cancellation of external light signal, preliminary fast readout, and main readout of a selected part. Equipped with peripheral circuits, the chip is 3.66×3.7 mm in size and is very suitable for image processing use

Keywords

BiCMOS integrated circuits; image processing equipment; infrared imaging; integrated circuit design; integrated circuit noise; nondestructive readout; 100 pixel; 2 mum; 70 pixel; 7000 pixel; Bi-CMOS process; base stored image sensor; bipolar frame memory cells; bipolar image detector; bipolar sensor cells; external light signal cancellation; high signal-to-noise ratio; image processing use; long time hold immunity; near-infrared LED ray detection; noise cancellation; peripheral circuits; preliminary fast readout; selected part readout; signal charge amplification; signal transfer circuits; smart functions; Charge coupled devices; Circuits; Detectors; Image processing; Image sensors; Intelligent sensors; Pixel; Sensor phenomena and characterization; Signal processing; Signal to noise ratio;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.628835

Filename

628835